BSC019N02KS GOptiMOS®2 Power-TransistorFeatures• For fast switching converters and sync. rectification• Qualified according to JEDEC for target applications• Super Logic level 2.5V rated; N-channel• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• Superior thermal resistance• Avalanche rated• Pb-free plating; RoHS compliant1)Product SummaryVDSRDS(on),maxID201.95100VmΩAPG-TDSON-8TypeBSC019N02KS GPackagePG-TDSON-8Marking19N02KSMaximum ratings, at Tj=25 °C, unless otherwise specifiedParameterContinuous drain currentSymbolConditionsIDVGS=4.5 V, TC=25 °CVGS=4.5 V, TC=100 °CVGS=2.5 V, TC=25 °CVGS=2.5 V, TC=100 °CVGS=4.5 V, TA=25 °C, RthJA=45 K/W2)Value10010010095UnitA30200800mJPulsed drain currentAvalanche energy, single pulseID,pulseEASdv/dtVGSTC=25 °C3)ID=50 A, RGS=25 ΩID=50 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °CReverse diode dv/dt6kV/µsGate source voltage1)±12V J-STD20 and JESD22Rev. 1.2page 12008-10-10
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BSC019N02KS G
Maximum ratings, at Tj=25 °C, unless otherwise specifiedParameterPower dissipation
SymbolConditionsPtot
TC=25 °CTA=25 °C, RthJA=45 K/W2)
Operating and storage temperatureIEC climatic category; DIN IEC 68-1
Tj, Tstg
Value1042.8-55 ... 15055/150/56
°CUnitW
ParameterSymbolConditions
min.
Valuestyp.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
RthJC
bottomtop
SMD version, device on PCB
RthJA
minimal footprint6 cm2 cooling area2)
Electrical characteristics, at Tj=25 °C, unless otherwise specifiedStatic characteristics
Drain-source breakdown voltageGate threshold voltageZero gate voltage drain current
V(BR)DSSVGS=0 V, ID=1 mAVGS(th)IDSS
VDS=VGS, ID=350 µAVDS=20 V, VGS=0 V, Tj=25 °C
VDS=20 V, VGS=0 V, Tj=125 °C
Gate-source leakage currentDrain-source on-state resistance
IGSSRDS(on)
VGS=12 V, VDS=0 VVGS=2.5 V, ID=50 AVGS=4.5 V, ID=50 A
Gate resistanceTransconductance
2)
--1.218
K/W
--
--
6245
200.7-
-0.95-
-1.21
V
µA
-----
--2.31.61.9210
1001003.01.95--ΩSnAmΩ
RGgfs
|VDS|>2|ID|RDS(on)max, ID=50 A
100
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3
3)
Rev. 1.2page 22008-10-10
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BSC019N02KS G
Parameter
SymbolConditions
min.
Dynamic characteristicsInput capacitanceOutput capacitance
Reverse transfer capacitanceTurn-on delay timeRise time
Turn-off delay timeFall time
Gate Charge Characteristics4)Gate to source chargeGate charge at thresholdGate to drain chargeSwitching chargeGate charge totalGate plateau voltageGate charge total, sync. FETOutput chargeReverse Diode
Diode continuous forward currentDiode pulse currentDiode forward voltage
ISIS,pulseVSD
TC=25 °C
VGS=0 V, IF=50 A, Tj=25 °C
VR=10 V, IF=50 A, diF/dt=100 A/µs
-----0.8
1004001.2
VA
QgsQg(th)QgdQswQgVplateauQg(sync)Qoss
VDS=0.1 V, VGS=0 to 4.5 VVDD=10 V, VGS=0 VVDD=10 V, ID=50 A, VGS=0 to 4.5 V
--------1991121642.05937
25.112.116.929.885.0-78.5-VnCnC
CissCossCrsstd(on)trtd(off)tf
VDD=10 V, VGS=4.5 V, ID=50 A, RG=1.6 ΩVGS=0 V, VDS=10 V, f=1 MHz
-------9600270041015187958
13000pF3600620----ns
Valuestyp.
max.
Unit
Reverse recovery chargeQrr-55.6-nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.2page 32008-10-10
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BSC019N02KS G1 Power dissipationPtot=f(TC)2 Drain currentID=f(TC); VGS≥4.5 V1201201001008080Ptot [W]60ID [A]0408012016060404020200004080120160TC [°C]TC [°C]3 Safe operating areaID=f(VDS); TC=25 °C; D=0parameter: tp103limited by on-stateresistance10 µs100 µs4 Max. transient thermal impedanceZthJC=f(tp)parameter: D=tp/T1011021 ms1000.50.2ZthJC [K/W]ID [A]10110 ms0.110-10.050.020.01DC10010-2single pulse10-110-110010110210-310-610-510-410-310-210-1100VDS [V]tp [s]Rev. 1.2page 42008-10-10元器件交易网www.cecb2b.comBSC019N02KS G5 Typ. output characteristicsID=f(VDS); Tj=25 °Cparameter: VGS2004 V3 V2.5 V2.4 V6 Typ. drain-source on resistanceRDS(on)=f(ID); Tj=25 °Cparameter: VGS9876175150RDS(on) [mW]1251.8 VID [A]2.2 V5432 V100752 V2.2 V2.5 V5024.5 V1.8 V1.6 V3 V2510230102030403.5 V00150VDS [V]ID [A]7 Typ. transfer characteristicsID=f(VGS); |VDS|>2|ID|RDS(on)maxparameter: Tj1008 Typ. forward transconductancegfs=f(ID); Tj=25 °C3503007525050gfs [S]25 °C150 °CID [A]20015025100500012300255075100VGS [V]ID [A]Rev. 1.2page 52008-10-10
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BSC019N02KS G9 Drain-source on-state resistanceRDS(on)=f(Tj); ID=50 A; VGS=4.5 V10 Typ. gate threshold voltageVGS(th)=f(Tj); VGS=VDS41.631.2RDS(on) [mΩ]VGS(th) [V]3500 µA298 %typ0.8350 µA10.40-60-2020601001400-60-202060100140Tj [°C]Tj [°C]11 Typ. capacitancesC=f(VDS); VGS=0 V; f=1 MHz12 Forward characteristics of reverse diodeIF=f(VSD)parameter: Tj105103102104CissC [pF]150 °C25 °CCossIF [A]101150 °C, 98%10325 °C, 98%Crss1001020510152010-100.511.52VDS [V]VSD [V]Rev. 1.2page 62008-10-10
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BSC019N02KS G13 Avalanche characteristicsIAS=f(tAV); RGS=25 Ωparameter: Tj(start)10314 Typ. gate chargeVGS=f(Qgate); ID=50 A pulsedparameter: VDD5425 °C10 V16 V1023IAV [A]100 °C4 VVGS [V]210103125 °C10110010010110tAV [µs]2020406080Qgate [nC]15 Drain-source breakdown voltageVBR(DSS)=f(Tj); ID=1 mA16 Gate charge waveforms24VGSQg22VBR(DSS) [V]20Vgs(th)18Qg(th)Qgs-60-202060100140QswQgdQgate16Tj [°C]Rev. 1.2page 72008-10-10
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BSC019N02KS G
Package OutlinePG-TDSON-8: Outline
PG-TDSON-8
Footprint
Dimensions in mm
Rev. 1.2
page 8
2008-10-10
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BSC019N02KS G
Package OutlinePG-TDSON-8: Tape
Dimensions in mm
Rev. 1.2
page 9
2008-10-10
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Published by
Infineon Technologies AG81726 Munich, Germany
© 2008 Infineon Technologies AGAll Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee ofconditions or characteristics. With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device,Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rightsof any third party.
Information
For further information on technology, delivery terms and conditions and prices, pleasecontact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For informationon the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only withthe express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affectthe safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the useror other persons may be endangered.
Rev. 1.2page 10BSC019N02KS G
2008-10-10
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