Semiconductor device having stacked transistors an

专利名称：Semiconductor device having stacked

transistors and decoupling capacitors

发明人：Yang, Hyang-Ja申请号：EP06005513.4申请日：20060317公开号：EP1705693A2公开日：20060927

专利附图：

摘要：A semiconductor device having transistors formed on different layers of a stackstructure includes a stacked capacitor cluster, wherein a stacked capacitor (C1,C2,C3) ofthe stacked capacitor cluster includes an insulation layer (40,50,61) of a transistor of the

semiconductor device, and at least a first conduction layer and a second conduction layer(30,42,45,52,60,63) disposed above and below the insulation layer, wherein the stackedcapacitor is a decoupling capacitor of the stacked capacitor cluster connected in parallelbetween a first line and a second line. The stack structure is used to form SRAM memorycells.

申请人：Samsung Electronics Co., Ltd.

地址：416 Maetan-dong Yeongtong-gu Suwon-city, Gyeonggi-do 442-742 KR

国籍：KR

代理机构：Patentanwälte Ruff, Wilhelm, Beier, Dauster & Partner

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