A METHOD OF PRODUCING ISOLATED SILICON STRUCTURES

专利名称：A METHOD OF PRODUCING ISOLATED

SILICON STRUCTURES

发明人：BENJAMIN, John, David,KEEN, John, Michael申请号：EP86905875.0申请日：19860923公开号：EP0243392A1公开日：19871104

摘要： Pocédé production of isolated structures on silicon by forming three layers in awafer (1) of crystalline silicon, an outer silicon layer having areas n-doped (2), a middlelayer (5) composed of p-type silicon, and an inner layer composed of n-type siliconregions (6) interspersed with areas (7) p-type silicon, said two type silicon regions n beingoffset with respect to one another. then the p-type silicon is anodized by passing acurrent through the wafer, then the porous silicon oxidation is caused in silicon dioxidewhich can be either retained as insulator is dissolved to separate the n-type regions onthe layer external. Areas in n-type silicon (2) in the outer layer may have the form ofparallel stripes separated by narrower strips (4) p-type silicon, the inner layer preferablyhaving in this case a similar configuration in which the center lines of the p-type bands arelocated below the center lines of the n-type strips (2) of the outer layer.

申请人：The Secretary of State for Defence in Her Britannic Majesty's Government ofthe United Kingdom of Great Britain and

地址：Northern Ireland Whitehall London SW1A 2HB GB

国籍：GB

代理机构：Russell, James, Dr., et al

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