专利名称：Method of making a SOI silicon structure发明人：Dan W. Chilcott申请号：US11151680申请日：20050613公开号：US07160751B2公开日：20070109
专利附图：
摘要：A process for making a microelectromechanical device having a moveablecomponent defined by a gap pattern in a semiconductor layer of a silicon-on-insulatorwafer involves the use of a plurality of deep reactive ion etching steps at various etchdepths that are used to allow a buried oxide layer of the silicon-on-insulator wafer to beexposed in selected areas before the entire moveable component of the resulting deviceis freed for movement. This method allows wet release techniques to be used to removethe buried oxide layer without developing stiction problems. This is achieved by utilizingdeep reactive ion etching to free the moveable component after a selected portion ofthe buried oxide layer has been removed by wet etching.
申请人：Dan W. Chilcott
地址：Greentown IN US
国籍：US
代理人：Jimmy L. Funke
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