Electrode or wiring for a semiconductor device, an

专利名称：Electrode or wiring for a semiconductor

device, an active matrix substrate andprocess for production thereof

发明人：Fukumoto, Yoshihiko申请号：EP96306683.2申请日：19960913公开号：EP0768710A3公开日：19970730

专利附图：

摘要：A process for producing a semiconductor device comprises a step of polishingof a region of an electroconductive material serving as an electrode or a wiring line in aninsulating layer formed on a semiconductor region, the region of the electroconductivematerial being electrically connected to the semiconductor region, wherein a region ofanother material is formed within the region of the electroconductive material to bepolished. Also a semiconductor device having the region is provided. A process forproducing an active matrix substrate comprises a step of polishing of picture elementelectrodes made of a metal provided on crossing portions of plural signal lines andplural scanning lines and a means for applying voltage to the picture elements, wherein aregion of another material is formed within the region of the picture element electrode

to be polished. An active matrix substrate has such picture element electrodes asmentioned above.

申请人：CANON KABUSHIKI KAISHA

地址：30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP

国籍：JP

代理机构：Beresford, Keith Denis Lewis

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