INTEGRATED CIRCUITS AND METHODS FOR OPERATING INTE

专利名称：INTEGRATED CIRCUITS AND METHODS FOR

OPERATING INTEGRATED CIRCUITS WITHNON-VOLATILE MEMORY

发明人：Ricardo Pablo Mikalo,Stefan Flachowsky申请号：US14741528申请日：20150617

公开号：US20150333080A1公开日：20151119

专利附图：

摘要：Integrated circuits and methods for fabricating integrated circuits are provided.In an exemplary embodiment, an integrated circuit includes a semiconductor substrate

doped with a first conductivity-determining impurity. The semiconductor substrate hasformed therein a first well doped with a second conductivity-determining impurity that isdifferent from the first conductivity-determining impurity, a second well, formed withinthe first well, and doped with the first conductivity-determining impurity, and a third wellspaced apart from the first and second wells and doped with the first conductivity-determining impurity. The integrated circuit further includes a floating gate structureformed over the semiconductor substrate. The floating gate structure includes a firstgate element disposed over the second well and being separated from the second wellwith a dielectric layer, a second gate element disposed over the third well and beingseparated from the third well with the dielectric layer, and a conductive connector.

申请人：GLOBALFOUNDRIES, Inc.

地址：Grand Cayman KY

国籍：KY

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