专利名称：VOLUMETRIC INTEGRATED CIRCUIT AND
VOLUMETRIC INTEGRATED CIRCUITMANUFACTURING METHOD
发明人：Daniel C. Edelstein,Michael A.
Gaynes,Thomas M. Shaw,Bucknell C.Webb,Roy R. Yu
申请号：US14221477申请日：20140321
公开号：US20150270246A1公开日：20150924
专利附图：
摘要：A volumetric integrated circuit manufacturing method is provided. The methodincludes assembling a slab element of elongate chips, exposing a wiring layer betweenadjacent elongate chips of the slab element, metallizing a surface of the slab element atand around the exposed wiring layer to form a metallized surface electrically coupled tothe wiring layer and passivating the metallized surface to hermetically seal themetallized surface.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
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