Test element group (TEG) system for measurement of

专利名称：Test element group (TEG) system for

measurement of SOI-MOSFET without abody contact comprising first and secondTEGs of unequal gate electrode areas

发明人：Osamu Yamaguchi申请号：US11896688申请日：20070905公开号：US07807997B2公开日：20101005

专利附图：

摘要：Two TEGs are used for acquiring FET capacity. A first TEG includes a first base

section of the same shape and same dimensions as a gate electrode of the FET whosecapacity is to be acquired, and a first additional section added at one end of the first basesection. A second TEG includes a second base section of the same shape and samedimensions as the first base section, a second additional section having the same shapeand same dimensions as the first additional section and added to one end of the secondbase section, and a third additional section having the same shape and same dimensionsas the second additional section and added to the other end of the second base section.The capacity between the body and source or between the body and drain of the FETwhose capacity is to be acquired is estimated from the difference in capacity between thebody and source or between the body and drain of the first TEG and second TEG.

申请人：Osamu Yamaguchi

地址：Saitama JP

国籍：JP

代理机构：Rabin & Berdo, P.C.

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