CHARGE PUMPING CIRCUIT

专利名称：CHARGE PUMPING CIRCUIT

发明人：Chang Sun KIM,Jang Hyun Park,Seong Hoon

CHOI,Young Doo SONG,Seung HoonSHIN,Yung Seon EO

申请号：US13081331申请日：20110406

公开号：US20110248763A1公开日：20111013

专利附图：

摘要：A charge pumping circuit is provided to regulate the amount of charge to bepumped according to a driving voltage to reduce the loss of power and increase charge

pumping efficiency. The charge pumping circuit includes: a driving voltage sensing unitsensing a driving voltage to generate one or more sensing signals for determining theamount of charge to be pumped; a multi-level clock generation unit generating a pair ofclock signals each having an amplitude corresponding to a signal value of each of the oneor more sensing signals; and a charge pumping unit charging the pair of clock signals togenerate a charged voltage, adding the charged voltage to the driving voltage, andoutputting the same.

申请人：Chang Sun KIM,Jang Hyun Park,Seong Hoon CHOI,Young Doo SONG,SeungHoon SHIN,Yung Seon EO

地址：Seoul KR,Seoul KR,Seoul KR,Gunpo KR,Seoul KR,Seongnam KR

国籍：KR,KR,KR,KR,KR,KR

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