专利名称：Method of measuring characteristics of a
semiconductor element and method ofmanufacturing a semiconductor device
发明人：Atsushi Narazaki申请号：US13044985申请日：20110310公开号：US08519733B2公开日：20130827
专利附图：
摘要：A measurement terminal is arranged at an edge of a semiconductor wafer to beapart from a gate electrode and a source electrode formed in a surface portion on one
side in a thickness direction of a semiconductor wafer so that an electrode contactportion is in contact with a drain electrode on the other side in the thickness direction ofthe semiconductor wafer and that a terminal contact portion is exposed to the one sidein the thickness direction of the semiconductor wafer. A probe terminal is brought intocontact with the terminal contact portion of the measurement terminal and the probeterminal is brought into contact with the gate electrode and the source electrode, tothereby measure electrical characteristics of a MOSFET.
申请人：Atsushi Narazaki
地址：Tokyo JP
国籍：JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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