专利名称：SYSTEM, APPARATUS, AND METHOD FOR
PROCESSING WAFER USING SINGLEFREQUENCY RF POWER IN PLASMAPROCESSING CHAMBER
发明人：KUTHI, Andras,FISCHER, Andreas申请号：EP01981834.3申请日：20011005公开号：EP1323180A2公开日：20030702
摘要：The present invention provides a system, apparatus, and method for processinga wafer using a single frequency RF power in a plasma processing chamber. The plasmaprocessing system includes a modulated RF power generator, a plasma processingchamber, and a match network. The modulated RF power generator is arranged togenerate a modulated RF power. The plasma processing chamber is arranged to receivethe modulated RF power for processing the wafer and is characterized by an internalimpedance during the plasma processing. The plasma processing chamber includes anelectrostatic chuck for holding the wafer in place with the electrostatic chuck including afirst electrode disposed under the wafer for receiving the modulated RF power. Theplasma processing chamber further includes a second electrode disposed over the wafer.The modulated RF power generates plasma and ion bombardment energy for processingthe wafer. The match network is coupled between the modulated RF power generatorand the plasma processing chamber to receive and transmit the modulated RF powerfrom the modulated RF power generator to the plasma processing chamber. The match
network is further configured to match an impedance of the modulated RF powergenerator to the internal impedance of the plasma processing chamber.
申请人：LAM RESEARCH CORPORATION
地址：4650 Cushing Parkway Fremont, CA 94538 US
国籍：US
代理机构：Thomson, Paul Anthony
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