Scintillation detector for detection of ionising r

专利名称：Scintillation detector for detection of

ionising radiation

发明人：Alice Hospodková,Karel Bla{circumflex over

(z)}ek,Eduard Hulicius,Jan Touŝ,Martin Nikl

申请号：US15541476申请日：20160208公开号：US10067246B2公开日：20180904

专利附图：

摘要：A scintillation detector for detecting ionizing radiation, which comprises: amonocrystalline substrate layer; at least one bottom nitride semiconductor layer; an

active area on top of the nitride bottom semiconductor layer, which comprises a pluralityof alternating nitride semiconductor layers of substantially the same polarization, eachcouple of the alternating layers consists of a barrier layer of a AlInGaN type and apotential well layer of a AlInGaN type for radiant recombinations of electrons and holes,where xb≤xw and yb≤yw is valid; at least one top nitride semiconductor layer on top ofthe active area; and at least one GaN buffer layer for binding with epitaxy on top of saidmonocrystalline substrate a structure which comprises: the bottom nitridesemiconductor layer; the alternating layers of the active area; and the top nitride

semiconductor layer; each of the nitride semiconductor layers has the general formula ofAlInGaN.

申请人：CRYTUR, SPOL. S R.O.,FYZIKÁLNÍ ÚSTAV AV ĈR, V.V.I.

地址：Turnov CZ,Prague CZ

国籍：CZ,CZ

代理人：Mark M. Friedman

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