专利名称：FLASH MEMORY DEVICE
发明人：Wiley Eugene Hill,Haihong Wang,Yider
Wu,Bin Yu
申请号：US10726508申请日：20031204
公开号：US20050121716A1公开日：20050609
专利附图：
摘要：A memory device includes a conductive structure, a number of dielectric layersand a control gate. The dielectric layers are formed around the conductive structure andthe control gate is formed over the dielectric layers. A portion of the conductive
structure functions as a drain region for the memory device and at least one of thedielectric layers functions as a charge storage structure for the memory device. Thedielectric layers may include oxide-nitride-oxide layers.
申请人：Wiley Eugene Hill,Haihong Wang,Yider Wu,Bin Yu
地址：Moss Beach CA US,Milpitas CA US,Campbell CA US,Cupertino CA US
国籍：US,US,US,US
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