专利名称：INTEGRATED CIRCUITS AND METHODS FOR
FABRICATING INTEGRATED CIRCUITSHAVING METAL GATE ELECTRODES
发明人：Ruilong Xie,Chanro Park,Shom Ponoth申请号：US13773397申请日：20130221
公开号：US20140231885A1公开日：20140821
专利附图：
摘要：Integrated circuits and methods for fabricating integrated circuits are provided.In an exemplary embodiment, a method for fabricating integrated circuits includes
providing a sacrificial gate structure over a semiconductor substrate. The sacrificial gatestructure includes two spacers and sacrificial gate material between the two spacers. Themethod recesses a portion of the sacrificial gate material between the two spacers.Upper regions of the two spacers are etched while using the sacrificial gate material as amask. The method includes removing a remaining portion of the sacrificial gate materialand exposing lower regions of the two spacers. A first metal is deposited between thelower regions of the two spacers. A second metal is deposited between the upperregions of the two spacers.
申请人：GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINESCORPORATION
地址：Grand Cayman KY,Armonk NY US
国籍：KY,US
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