Method of controlling non-volatile memory device

专利名称：Method of controlling non-volatile memory

device

发明人：Hyun-Jin Choi,Chan-Ik Park,Jeong-Woo

Lee,Sung-Joo Yoo

申请号：US13116214申请日：20110526公开号：US08467262B2公开日：20130618

专利附图：

摘要：A method of controlling a non-volatile memory device includes comparing thenumber of banks that are in operating states with a threshold value. If the number of the

banks is smaller than the threshold value, data stored in a standby bank is read. If thereis no bank having data to be read, a standby bank is programmed. If the number of thebanks is equal to or greater than the threshold value or if the reading or the

programming is performed, it is determined whether there is a reading or programmingcommand to be performed. If there is the reading or programming command to beperformed, the process is repeated from the comparing step. The programming mayinclude programming of a most significant bit (MSB) page or a least significant bit (LSB)page.

申请人：Hyun-Jin Choi,Chan-Ik Park,Jeong-Woo Lee,Sung-Joo Yoo

地址：Suwon-si KR,Hwaseong-si KR,Seoul KR,Pohang-si KR

国籍：KR,KR,KR,KR

代理机构：F. Chau & Associates, LLC

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