LASER DIODE

申请(专利)号： US201816642610

专利号： US2020220330A1 主分类号： H01S5/34

申请权利人： OSRAM OLED

GMBH

公开国代码： US 优先权国家： DE

摘 要：

A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material

includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes

Al_x1Ga_1-x1N with 0≤x1≤1 or

Al_x1In_y1Ga_1-x1-y1N with 0≤x1≤1, 0≤y1<1 and x1+y1≤1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a

maximum value x1_max and a minimum value

x1_min≤x1_max, and the second partial layer includes Al_x2Ga_1-x2N

申请日： 2018-09-19 公开公告日： 2020-07-09

分类号： H01S5/34;

H01S5/026; H01S5/20; H01S5/30 发明设计人： CHRISTOPH

EICHLER;

MATTHIAS PETER; JAN WAGNER 申请国代码： US

优先权： 20170922 DE 10

2017 122 032.1

摘 要 附 图：

with 0≤x2≤x1_min or

Al_x2In_y2Ga_1-x2-y2N with

0≤x2≤x1_min, 0≤y2<1 and x2+y2≤1. 主权项：

1.-17. (canceled)/n

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