2D3D Analysis for Abnormal Tools and Stages Diagn

专利名称：2D/3D Analysis for Abnormal Tools and

Stages Diagnosis

发明人：Chun-Hsien Lin,Jui-Long Chen,Hui-Yun

Chao,Jong-I Mou,Chin-Hsiang Lin

申请号：US13647643申请日：20121009

公开号：US20140100684A1公开日：20140410

专利附图：

摘要：A method for analyzing abnormalities in a semiconductor processing systemprovides performing an analysis of variance on a production history associated with each

of a plurality of tools at each of a plurality of process steps for each of a plurality ofprocessed wafers, and key process steps are identified. A regression analysis on aplurality of measurements of the plurality of wafers at each process step is performedand key measurement parameters are identified. An analysis of covariance on the keymeasurement parameters and key process steps, and the key process steps are rankedbased on an f-ratio, therein ranking an abnormality of the key process steps. Further, theplurality of tools associated with each of the key process steps are ranked based on anorthogonal t-ratio associated with an analysis of covariance, therein ranking anabnormality each tool associated with the key process steps.

申请人：TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.

地址：Hsin-Chu TW

国籍：TW

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