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Junction temperature sensing for MOSFET

2021-10-13 来源:客趣旅游网
专利内容由知识产权出版社提供

专利名称:Junction temperature sensing for MOSFET发明人:Jun Honda申请号:US11485892申请日:20060713

公开号:US20070014067A1公开日:20070118

专利附图:

摘要:A method of protecting a MOSFET switch from overheating. The method isachieved by determining a ratio of ON resistance of the switch to resistance of a senseresistor, the sense resistor being series coupled in the source-drain circuit of the switch.Further, the ratio is compared to a reference signal and an output signal is generated

when the ratio exceeds the reference signal.

申请人:Jun Honda

地址:El Segundo CA US

国籍:US

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