Film formation apparatus and method for using the

专利名称：Film formation apparatus and method for

using the same

发明人：Mitsuhiro Okada,Satoshi Mizunaga,Yamato

Tonegawa,Toshiharu Nishimura

申请号：US11905628申请日：20071002

公开号：US20080132079A1公开日：20080605

专利附图：

摘要：A method for using a film formation apparatus for a semiconductor processincludes a first cleaning process of removing by a first cleaning gas a by-product film

from an inner surface of a reaction chamber of the film formation apparatus, whilesupplying the first cleaning gas into the reaction chamber, and setting an interior of thereaction chamber at a first temperature and a first pressure to activate the first cleaninggas. The method further includes a second cleaning process of then removing by asecond cleaning gas a contaminant from the inner surface of the reaction chamber, whilesupplying the second cleaning gas into the reaction chamber, and setting the interior ofthe reaction chamber at a second temperature and a second pressure to activate thesecond cleaning gas. The second cleaning gas includes a chlorine-containing gas.

申请人：Mitsuhiro Okada,Satoshi Mizunaga,Yamato Tonegawa,Toshiharu Nishimura

地址：Nirasaki-shi JP,Nirasaki-shi JP,Nirasaki-shi JP,Nirasaki-shi JP

国籍：JP,JP,JP,JP

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