2SA2021资料

Transistors

2SA2021Silicon PNP epitaxial planer typeFor general amplificationComplementary to 2SC5609IFeatures•High foward current transfer ratio hFE•SSS-mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing0.23+0.05–0.02120.15 min.Unit: mm0.33+0.05–0.0230.15 min.0.80±0.051.20±0.050.52±0.030.10+0.05–0.02(0.40)(0.40)0.80±0.051.20±0.055˚IAbsolute Maximum Ratings Ta = 25°CCollector to base voltageCollector to emitter voltageEmitter to base voltagePeak collector currentCollector currentCollector power dissipationJunction temperatureStorage temperatureVCBOVCEOVEBOICPICPCTjTstg−60−50−7−200−100100125−55 to +125VVVmAmAmW°C°C0 to 0.01ParameterSymbolRatingUnit1: Base2: Emitter3: Collector SSS Mini Type Package (3-pin)Marking Symbol: 3EIElectrical Characteristics Ta = 25°C ± 3°CParameterCollector cutoff currentCollector to base voltageCollector to emitter voltageEmitter to base voltageForward current transfer ratioCollector to emitter saturation voltageCollector output capacitanceTransition frequencySymbolICBOICEOVCBOVCEOVEBOhFEVCE(sat)CobfTConditionsVCB = −20 V, IE = 0VCE = −10 V, IB = 0IC = −10 µA, IE = 0IC = −100 µA, IB = 0IE = −10 µA, IC = 0VCE = −10 V, IC = −2 mAIC = −100 mA, IB = −10 mAVCB = −10 V, IE = 0, f = 1 MHzVCB = −10 V, IE = 1 mA, f = 200 MHz−60−50−7180− 0.32.780390− 0.5VpFMHzMinTypMax− 0.1−100UnitµAµAVVV5˚1