专利名称:RESONATOR
发明人:NGUYEN HOANG, Viet,GRAVESTEIJN,
Dirk,SURDEANU, Radu
申请号:EP07826663.2申请日:20071005公开号:EP2082481B1公开日:20100505
摘要:A method of making a resonator, preferably a nano-resonator, includes startingwith a FINFET structure with a central bar, first and second electrodes connected to thecentral bar, and third and fourth electrodes on either side of the central bar andseparated from the central bar by gate dielectric. The structure is formed on a buriedoxide layer. The gate dielectric and buried oxide layer are then selectively etched away toprovide a nano-resonator structure with a resonator element 30, a pair of resonatorelectrodes (32,34), a control electrode (36) and a sensing electrode (38).
申请人:NXP BV
地址:NL
国籍:NL
代理机构:Burton, Nick
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