专利名称：Silicon-based semiconductor photodetector
with an improved optical fiber guide groove
发明人：Mitsuhiro Sugiyama申请号：US08/934750申请日：19970922公开号：US05999675A公开日：19991207
摘要：The present invention provides a semiconductor photodetector formed over asubstrate and being positioned adjacent to an optical fiber guiding groove also formed insaid substrate bounding structure, said semiconductor photodetector having an opticalwaveguide layer including an optical absorption layer, wherein an edge portion of saidoptical waveguide layer is bounded to a side portion of said optical fiber guiding groovethrough an insulation layer having an refractive index higher than any parts of said opticalwaveguide layer.
申请人：NEC CORPORATION
代理机构：Young & Thompson
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