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2N4123资料

2023-06-17 来源:客趣旅游网
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2N4123, 2N4124General PurposeTransistors

NPN Silicon

Features

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COLLECTOR

3Symbol

2N41232N4124

Collector−Base Voltage

2N41232N4124

Emitter−Base VoltageCollector Current − ContinuousTotal Device Dissipation @ TA = 25°CDerate above 25°C

Total Device Dissipation @ TC = 25°CDerate above 25°C

Operating and Storage JunctionTemperature Range

VCEO

Value3025

Vdc

40305.02006255.01.512−55 to +150

VdcmAdcmWmW/°CWmW/°C°C

TO−92CASE 29STYLE 11212UnitVdc

2BASE1EMITTER

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

VCBO

VEBOICPDPDTJ, Tstg

3STRAIGHT LEADBULK PACKTHERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−AmbientThermal Resistance, Junction−to−Case

SymbolRqJARqJC

Max20083.3

Unit°C/W°C/W

MPS412xAYWWGG3BENT LEADTAPE & REELAMMO PACKMARKING DIAGRAMStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.

x = 3 or 4A = Assembly LocationY = YearWW = Work WeekG = Pb−Free Package(Note: Microdot may be in either location)ORDERING INFORMATION

Device2N4123RLRM2N4124G

PackageTO−92TO−92(Pb−Free)

Shipping†2000 / Tape & Ammo5000 Units / Bulk

*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting Techniques ReferenceManual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.

Publication Order Number:

2N4123/D

1

March, 2007 − Rev. 3

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2N4123, 2N4124

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IE = 0)Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 2.0 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

Collector−Emitter Saturation Voltage (Note 1)

(IC = 50 mAdc, IB = 5.0 mAdc)Base−Emitter Saturation Voltage (Note 1)

(IC = 50 mAdc, IB = 5.0 mAdc)SMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)Collector−Base Capacitance

(IE = 0, VCB = 5.0 V, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz)Current Gain − High Frequency

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)1.Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2N41232N41242N41232N41242N41232N4124

NF

2N41232N4124

−−

6.05.0

2N41232N4124

fT

MHz

250300−−501202.53.050120

−−

pF

8.0

pF

4.0

200480

−−200480

dB

2N41232N41242N41232N4124

VCE(sat)VBE(sat)hFE

501202560−−

150360−−

Vdc

0.3

Vdc

0.95

2N41232N41242N41232N4124

V(BR)CEO

Vdc

302540305.0−−

−−

Vdc

−−

Vdc

nAdc

50

nAdc

50

Symbol

Min

Max

Unit

V(BR)CBO

V(BR)EBOICBOIEBO

CiboCcbhfe

|hfe|

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2N4123, 2N4124

107.0CAPACITANCE (pF)5.0

CiboTIME (ns)2001007050302010.07.01.00.1

0.20.3

0.50.71.02.03.05.07.010REVERSE BIAS VOLTAGE (VOLTS)

2030405.01.0

tftrtdts3.02.0

CoboVCC = 3 VIC/IB = 10VEB(off) = 0.5 V2.03.0

5.07.01020305070100IC, COLLECTOR CURRENT (mA)

200

Figure 1. CapacitanceFigure 2. Switching Times

AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE(VCE = 5 Vdc, TA = 25°C)Bandwidth = 1.0 Hz

1210NF, NOISE FIGURE (dB)864200.1

SOURCE RESISTANCE = 200 WIC = 1 mANF, NOISE FIGURE (dB)SOURCE RESISTANCE = 200 WIC = 0.5 mASOURCE RESISTANCE = 1 kWIC = 50 mA141210864220

40

100

00.1

0.2

0.4

1.02.04.01020RS, SOURCE RESISTANCE (kW)

40

100

f = 1 kHzIC = 1 mAIC = 0.5 mAIC = 50 mAIC = 100 mASOURCE RESISTANCE = 500 WIC = 100 mA0.2

0.4

12410f, FREQUENCY (kHz)

Figure 3. Frequency VariationsFigure 4. Source Resistance

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2N4123, 2N4124

h PARAMETERS

(VCE = 10 V, f = 1 kHz, TA = 25°C)

300

ho e , OUTPUT ADMITTANCE (m mhos)5.0

10

100502010521

5.0

10

hfe, CURRENT GAIN200

1007050

30

0.10.2

0.51.02.0

IC, COLLECTOR CURRENT (mA)

0.10.2

0.51.02.0IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain

20hie, INPUT IMPEDANCE (kΩ)105.02.01.00.50.2

107.05.03.02.0

Figure 6. Output Admittance

h r e , VOLTAGE FEEDBACK RATIO (X 10− 4 )0.1

0.2

0.51.02.0

IC, COLLECTOR CURRENT (mA)

5.0

10

1.00.70.50.1

0.2

0.51.02.0IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 7. Input ImpedanceFigure 8. Voltage Feedback Ratio

STATIC CHARACTERISTICS

2.0

TJ = +125°C1.00.70.50.30.2

−󰀁55°C+25°CVCE = 1 Vh F E , DC CURRENT GAIN (NORMALIZED)0.1

0.10.20.30.50.71.02.03.05.07.010IC, COLLECTOR CURRENT (mA)

20305070100200Figure 9. DC Current Gain

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2N4123, 2N4124

V E , COLLECTOR EMITTER VOLTAGE (VOLTS)C1.0

TJ = 25°C0.80.60.40.20

0.01

IC = 1 mA10 mA30 mA100 mA0.020.030.050.070.1

0.20.30.5IB, BASE CURRENT (mA)

0.71.02.03.05.07.010

Figure 10. Collector Saturation Region

TJ = 25°C1.0V, VOLTAGE (VOLTS)0.8

VBE(sat) @ IC/IB = 10θV, TEMPERATURE COEFFICIENTS (mV/°C)1.21.00.50−󰀁0.5−󰀁1.0−󰀁1.5−󰀁2.0

qVB for VBE(sat)−󰀁55°C to +25°C+25°C to +125°CqVC for VCE(sat)−󰀁55°C to +25°C+25°C to +125°CVBE @ VCE = 1 V0.60.4

VCE(sat) @ IC/IB = 100.20

1.02.05.0102050IC, COLLECTOR CURRENT (mA)

100200020406080100120140160IC, COLLECTOR CURRENT (mA)

180200Figure 11. “On” VoltagesFigure 12. Temperature Coefficients

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2N4123, 2N4124

PACKAGE DIMENSIONS

TO−92 (TO−226)CASE 29−11ISSUE AM

ARPLSEATINGPLANE

BSTRAIGHT LEADBULK PACKNOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.

4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.

DIMABCDGHJKLNPRVINCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0210.0450.0550.0950.1050.0150.0200.500−−−0.250−−−0.0800.105−−−0.1000.115−−−0.135−−−MILLIMETERSMINMAX4.455.204.325.333.184.190.4070.5331.151.392.422.660.390.5012.70−−−6.35−−−2.042.66−−−2.542.93−−−3.43−−−KXXHV1DGJCNNSECTION X−XRABBENT LEADTAPE & REELAMMO PACKPTSEATINGPLANENOTES:

1.DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.

2.CONTROLLING DIMENSION:MILLIMETERS.

3.CONTOUR OF PACKAGE BEYONDDIMENSION R IS UNCONTROLLED.

4.LEAD DIMENSION IS UNCONTROLLED INP AND BEYOND DIMENSION K MINIMUM.

DIMABCDGJKNPRVMILLIMETERSMINMAX4.455.204.325.333.184.190.400.542.402.800.390.5012.70−−−2.042.661.504.002.93−−−3.43−−−STYLE 1:

PIN 1.EMITTER

2.BASE

3.COLLECTOR

KGXXV1DJCNSECTION X−XON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume anyliability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidentaldamages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary overtime. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license underits patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim ofpersonal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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