您的当前位置:首页正文

A2SHB单NMOS管芯片规格书

2021-04-21 来源:客趣旅游网
Wuxi PWChip Semi Technology CO., LTD PW2302A N-Channel Enhancement Mode MOSFET

GENERAL DESCRIPTION

The PW2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application..

FEATURES

VDS = 20V ID =3.2A

RDS(ON) < 32mΩ @ VGS=4.5V

Available in a 3-Pin SOT23-3 Package

SOT-23-3L(TOPVIEW) DDG

A2SHBSGS

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current,VGS @ 4.5VPulsed Drain Current Total Power Dissipation

32

11

Symbol Rating

20 VDS

±12 VGS

Unit

V V A A A W ℃ ℃ ℃/W

ID@TA=25℃ ID@TA=70℃

3.2 2.8 14.4 -55 To 150 -55 To 150 125 80

Continuous Drain Current,VGS @ 4.5V

IDM

PD @TA=25℃ 1

Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-ambient Thermal Resistance Junction-Case

1

1TSTG

TJ RθJA RθJC

PW2302A_1.1

无锡平芯微

1

无锡平芯微

Wuxi PWChip Semi Technology CO., LTD PW2302A Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

5

IS Source Current(A)4 32TJ=150℃TJ=25℃1000.30.60.91.2

Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics

VSD , Source-to-Drain Voltage (V) 1.8

1.4 1 0.6

0.2 -50

1.8-

050100150Normalized On Resistance1.4Normalized VGS(th)1.00.60.2TJ ,Junction Temperature (℃ )-50050100150TJ , Junction Temperature (℃)Fig.5 Normalized VGS(th) vs. TJ

PW2302A_1.1

无锡平芯微

Fig.6 Normalized RDSON vs. TJ

3

Wuxi PWChip Semi Technology CO., LTD PW2302A 1000 Capacitance (pF) F=1.0MHzCiss 100Coss Crss10159131721

VDS , Drain to Source Voltage (V)

Fig.7 Capacitance

VDS

VGS

Fig.8 Safe Operating Area

90%10%Td(on)TrTonTd(off)TfToff

Figure 9 Switching Time Waveform Figure 10 Gate Charge Waveform

1DUTY=0.5 0.20.10.1 0.05 0.02 0.010.01 P T0.001SINGLE PULSET D = T/T T = T + Px R 0.0001 0.00010.0010.010.11101001000 t , Pulse Width (s)

Figure 11 Normalized Maximum Transient Thermal Impedance

DMONONJpeakCDM θJCNormalized Thermal Response (R θJA)PW2302A_1.1

无锡平芯微

4

Wuxi PWChip Semi Technology CO., LTD PW2302A PACKAGE DESCRIPTION

Notes

1. All dimensions are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

5

PW2302A_1.1

无锡平芯微

因篇幅问题不能全部显示,请点此查看更多更全内容