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Manufacturing method for integrating a shunt resis

2024-04-08 来源:客趣旅游网
专利内容由知识产权出版社提供

专利名称:Manufacturing method for integrating a

shunt resistor into a semiconductor package

发明人:Ubol Udompanyavit,Sreenivasan K.

Koduri,Gerald William Steele,Jason MarcCole,Steven Kummerl

申请号:US12165932申请日:20080701公开号:US07847391B2公开日:20101207

专利附图:

摘要:An integrated circuit package that comprises a lead frame, an integrated circuit

located on the lead frame and a shunt resistor coupled to the lead frame and to theintegrated circuit. The shunt resistor has a lower temperature coefficient of resistancethan the lead frame, and the lead frame has a lower resistivity than the shunt resistor.The shunt resistor has a low-resistance coupling to external leads of the lead frame, or,the shunt resistor has its own integrated external leads.

申请人:Ubol Udompanyavit,Sreenivasan K. Koduri,Gerald William Steele,Jason MarcCole,Steven Kummerl

地址:Plano TX US,Allen TX US,Tucson AZ US,Sahuarita AZ US,Carrollton TX US

国籍:US,US,US,US,US

代理人:Yingsheng Tung,Wade J. Brady, III,Frederick J. Telecky, Jr.

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