专利名称：Flash memory array with independently
erasable sectors
发明人：Loren McLaury,David Lee Rutledge申请号：US12611262申请日：20091103公开号：US08059470B1公开日：20111115
专利附图：
摘要：In one embodiment, an integrated circuit includes a flash memory array with atleast first and second subarrays, or sectors, of memory cells. The subarrays have a set ofshared bitlines and separate sets of word lines. A bitline driver circuit is coupled to the
set of shared bitlines, a first row driver circuit is coupled to the set of word lines of thefirst subarray, and a second row driver circuit is coupled to the set of word lines of thesecond subarray. The first and second row driver circuits are operable to enable thememory cells of the first subarray to be erased independently of the memory cells ofthe second subarray. The two row driver circuits are further operable to enable thememory cells of the second subarray to be erased independently of the memory cells ofthe first subarray.
申请人：Loren McLaury,David Lee Rutledge
地址：Hillsboro OR US,Hillsboro OR US
国籍：US,US
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