Method of fabricating strained silicon on an SOI s

专利名称：Method of fabricating strained silicon on an

SOI substrate

发明人：Ninomiya, Masaharu,Matsumoto,

Koji,Nakamae, Masahiko,Miyao, Masanobu

申请号：EP06005989.6申请日：20060323公开号：EP1705698A2公开日：20060927

专利附图：

摘要：A strained Si-SOI substrate is produced by a method comprising: growing a SiGemixed crystal layer on an SOI substrate having a Si layer of not less than 5 nm in thickness

and a buried oxide layer; forming a protective film on the SiGe mixed crystal layer;implanting light element ions into a vicinity of an interface between the silicon layer andthe buried oxide layer; a first heat treatment for heat treating the substrate at atemperature of 400 to 1000°C in an inert gas atmosphere; a second heat treatment forheat treating the substrate at a temperature not lower than 1050°C in an oxidizingatmosphere containing chlorine; removing an oxide film from the surface of thesubstrate, and forming a strained silicon layer on the surface of the substrate.

申请人：SUMCO Corporation,Kyushu University, National University Corporation

地址：2-1, Shibaura 1-chome Minato-ku Tokyo JP,10-1 Hakozaki 6-chome Higashi-kuFukuoka-shi Fukuoka-ken JP

国籍：JP,JP

代理机构：Albrecht, Thomas

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