APM7313K
Dual N-Channel Enhancement Mode MOSFETFeatures
•
30V/6A,
RDS(ON) =21mΩ(typ.) @ VGS = 10VRDS(ON) =27mΩ(typ.) @ VGS = 4.5V
Pin Description
•••
Super High Dense Cell DesignReliable and Rugged
Lead Free Available (RoHS Compliant)
(8)D1Top View of SOP − 8
(7)D1(6)D2(5)D2Applications
•
Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems
(2)G1
(4)G2
S1(1)S2(3)
N-Channel MOSFET
Ordering and Marking Information
APM7313
Lead Free CodeHandling CodeTemp. RangePackage Code
Package Code K : SOP-8
Operating Junction Temp. Range
° C : -55 to 150 C
Handling Code
TU : Tube TR : Tape & ReelLead Free Code
L : Lead Free Device Blank : Original DeviceXXXXX - Date Code
APM7313 K :
APM7313XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in platetermination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldieringoperations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020Cfor MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.Copyright © ANPEC Electronics Corp.Rev. B.3 - Nov., 2005
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Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=10V Rating 30 ±20 6 24 3 150 -55 to 150 2 0.8 62.5 Unit V A A °C W °C/W *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS aParameter Test Condition APM7313K Min. 30 1 Typ. Max. 1.5 21 27 0.7 19 1.6 3.6 1 30 2 ±100 28 42 1.3 25 Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=250µA VDS=20V, VGS=0V TA=25°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=6A VGS=4.5V, IDS=2A ISD=2A, VGS=0V V µA V nA mΩ V RDS(ON) Drain-Source On-state Resistance VSD aDiode Forward Voltage bGate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=15V, VGS=10V, IDS=6A nC Copyright © ANPEC Electronics Corp.Rev. B.3 - Nov., 2005
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Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol Parameter bTest Condition APM7313K Min. Typ. Max. 2.1 835 150 105 7 8 28 6 13 15 40 9 Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
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Typical Characteristics
Power Dissipation
Drain Current
2.582.0
1.5
ID - Drain Current (A)6Ptot - Po wer (W)4 1.0
20.5
TA=25C020406080100120140160o0.00TA=25C,VG=10V020406080100120140160o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transi ent Thermal Resistance10021
Duty = 0.50.2ID - Dra in Current (A)Rds(on) Limit10
1ms10ms0.1
0.10.050.021
100ms1s0.01
0.010.1
DCSingle PulseMounted on 1in padoRθJA : 62.5 C/W20.010.01TA=25C0.11
o101001E-31E-41E-30.010.111030VDS - Drain - Source Voltage (V)Square Wave Pulse Duration (sec)
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Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
40
30
VGS= 4, 5, 6, 7, 8, 9, 10V3.5VRDS(ON) - On - Resistance (mΩ)25
36322824
VGS= 10V201612
VGS= 4.5VID - Drain Current (A)20
10
5
2.5V0
012345 04812162024VDS - Drain-Source Voltage (V)ID - Drain Current (A)
Transfer Characteristics Gate Threshold Voltage
1.751.501.251.000.750.500.250.00-50-25IDS= 250µΑ302015Tj=125CTj=25C5ooNormalized T hreshold Voltage25ID - Drain Current (A)10Tj=-55Co0012345 0255075100125150VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward 1.6VGS = 10V IDS = 6A30
Normalized On Resistance1.410
Tj=125Co1.21.0IS - Source Current (A)Tj=25C1
o0.80.6RON@Tj=25C: 21mΩ-250255075100125150o 0.4-500.10.00.20.40.60.81.01.21.4
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
VDS= 15V ID= 6A1400
Frequency=1MHz1200
VGS - Gate - source Voltage (V)8
C - Capacitance (pF)1000
Ciss800600400200
Crss0051015202530Coss6
4
2
0
048121620VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
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Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
EHe1De2A1A1L0.004max.Dim A A1 D E H L e1 e2 φ 1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8° Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8° Copyright © ANPEC Electronics Corp.Rev. B.3 - Nov., 2005
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Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow)
TP
Ramp-uptpCritical ZoneTL to TPTL
TemperaturetLTsmaxTsminRamp-downtsPreheat25
t 25 C to Peak°Time
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (TL) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp.Rev. B.3 - Nov., 2005
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Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volume mmVolume mm<350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 333Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program
Test itemSOLDERABILITYHOLTPCTTSTMethodMIL-STD-883D-2003MIL-STD 883D-1005.7JESD-22-B, A102MIL-STD 883D-1011.9Description245°C,5 SEC1000 Hrs Bias @ 125°C168 Hrs, 100% RH, 121°C-65°C ~ 150°C, 200 CyclesCarrier Tape & Reel Dimensions
tEPoPP1DWFBoAoD1KoCopyright © ANPEC Electronics Corp.Rev. B.3 - Nov., 2005
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Carrier Tape & Reel Dimensions(Cont.)
T2JCABT1Application A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm)
Cover Tape Dimensions
ApplicationSOP- 8Carrier Width12Cover Tape Width9.3Devices Per Reel2500 Customer Service
Anpec Electronics Corp.Head Office :
No.6, Dusing 1st Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-5642000Fax : 886-3-5642050Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-89191368Fax : 886-2-89191369
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