TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

专利名称：TRANSISTOR AND METHOD OF

MANUFACTURING THE SAME

发明人：Wei-Tsung CHEN,Po-Hsin LIN,Xue-Hung

TSAI

申请号：US15593348申请日：20170512

公开号：US20180047587A1公开日：20180215

专利附图：

摘要：A method of manufacturing a transistor, includes: (i) forming a metal-oxidesemiconductor layer over a substrate; (ii) forming a source electrode and a drain

electrode on different sides of the metal-oxide semiconductor layer; (iii) forming adielectric layer over the source electrode, the drain electrode, and the metal-oxidesemiconductor layer; (iv) forming a hydrogen-containing insulating layer over thedielectric layer, in which the hydrogen-containing insulating layer has an apertureexposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v)increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layerby treating the hydrogen-containing insulating layer so to form a source region and adrain region; and (vi) forming a gate electrode in the aperture.

申请人：E Ink Holdings Inc.

地址：HSINCHU TW

国籍：TW

更多信息请下载全文后查看