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DS75452资料

2020-03-02 来源:客趣旅游网
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DS75451/2/3SeriesDualPeripheralDriversFebruary2000

DS75451/2/3

SeriesDualPeripheralDrivers

GeneralDescription

TheDS7545XseriesofdualperipheraldriversisafamilyofversatiledevicesdesignedforuseinsystemsthatuseTTLlogic.Typicalapplicationsincludehighspeedlogicbuffers,powerdrivers,relaydrivers,lampdrivers,MOSdrivers,busdriversandmemorydrivers.

TheDS75451,DS75452andDS75453aredualperipheralAND,NANDandNORdrivers,respectively,(positivelogic)withtheoutputofthelogicgatesinternallyconnectedtothebasesoftheNPNoutputtransistors.

Features

nnnnnnnn

300mAoutputcurrentcapabilityHighvoltageoutputs

Nooutputlatch-upat20VHighspeedswitchingChoiceoflogicfunction

TTLcompatiblediode-clampedinputsStandardsupplyvoltages

ReplacesTI“A”and“B”series

ConnectionDiagrams

(Dual-In-LineandMetalCanPackages)

DS005824-2

constraints.

*See(Note5)andAppendixEregardingS.O.packagepowerdissipation

DS005824-3

TopView

OrderNumberDS75451MorDS75451N

TopView

OrderNumberDS75452MorDS75452N

SeeNSPackageNumbersM08A*orN08E

DS005824-4

*See(Note5)andAppendixEregardingS.O.packagepowerdissipationconstraints.

TopView

OrderNumberDS75453MorDS75453NSeeNSPackageNumbersM08A*orN08E

©2000NationalSemiconductorCorporation

DS005824

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DS75451/2/3AbsoluteMaximumRatings(Note1)

IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/Distributorsforavailabilityandspecifications.SupplyVoltage,(VCC)(Note2)InputVoltage

Inter-EmitterVoltage(Note3)OutputVoltage(Note4)OutputCurrent(Note5)MaximumPower(Note5)Dissipation†at25˚C

7.0V5.5V5.5V30V300mA

MoldedDIPPackageSOPackage

StorageTemperatureRange

LeadTemperature(Soldering,4sec.)957mW632mW

−65˚Cto+150˚C

260˚C

OperatingConditions

SupplyVoltage,(VCC)Temperature,(TA)

mW/˚Cabove25˚C.

Min4.750Max5.25+70UnitsV˚C

†Deratemoldedpackage7.7mW/˚Cabove25˚C,derateSOpackage7.56

ElectricalCharacteristics

(Notes6,7)SymbolVIHVILVIVOLParameter

High-LevelInputVoltageLow-LevelInputVoltageInputClampVoltageLow-LevelOutputVoltage

VCC=Min,II=−12mAVCC=VIL=0.8VMin,

(Figure7)V=2V

IHIOL=100mAIOL=300mAIOL=100mAIOL=300mAVIH=2V

DS75451,DS75453DS75451,DS75453DS75452DS75452

DS75451,DS75453DS75452

0.250.50.250.5

(Figure7)

Conditions

Min2

0.8−1.50.40.70.40.7100100140−1

DS75451DS75452DS75453DS75451DS75452DS75453

7118525654

−1.6111411657168

TypMaxUnits

VVVVVVVµAµAmAµAmAmAmAmAmAmAmA

IOHHigh-LevelOutputCurrent

IIIIHIILICCHInputCurrentatMaximumInputVoltage

High-LevelInputCurrentLow-LevelInputCurrentSupplyCurrent,OutputsHigh

VCC=VOH=30VMin,

VIL=0.8V

(Figure7)

VCC=Max,VI=5.5V,(Figure9)VCC=Max,VI=2.4V,(Figure9)VCC=Max,VI=0.4V,(Figure8)VCC=VI=5VMax,

VI=0V

(FigureVI=5V10)

VCC=VI=0VMax,

VI=5V

(FigureVI=0V10)

ICCLSupplyCurrent,Outputs

Low

SwitchingCharacteristics

(VCC=5V,TA=25˚C)SymboltPLHParameter

PropagationDelayTime,Low-to-HighLevelOutput

PropagationDelayTime,High-to-LowLevelOutput

TransitionTime,Low-to-HighLevelOutput

TransitionTime,High-to-LowLevelOutput

Conditions

CL=15pF,RL=50Ω,IO≈200mA,(Figure14)CL=15pF,RL=50Ω,IO≈200mA,(Figure14)

Min

DS75451DS75452DS75453

tPHLDS75451DS75452DS75453

tTLHtTHLCL=15pF,RL=50Ω,IO≈200mA,(Figure14)

CL=15pF,RL=50Ω,IO≈200mA,(Figure14)TypMax18261818241657

253525253525812

Unitsnsnsnsnsnsnsnsns

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DS75451/2/3SwitchingCharacteristics

SymbolVOHParameter

High-LevelOutputVoltageafterSwitching

(Continued)

Conditions

VS=20V,IO≈300mA,(Figure15)

MinVS−6.5

TypMax

UnitsmV

Note1:“AbsoluteMaximumRatings”arethosevaluesbeyondwhichthesafetyofthedevicecannotbeguaranteed.Exceptfor“OperatingTemperatureRange”theyarenotmeanttoimplythatthedevicesshouldbeoperatedattheselimits.Thetableof“ElectricalCharacteristics”providesconditionsforactualdeviceoperation.Note2:Voltagevaluesarewithrespecttonetworkgroundterminalunlessotherwisespecified.Note3:Thevoltagebetweentwoemittersofamultiple-emittertransistor.

Note4:Themaximumvoltagewhichshouldbeappliedtoanyoutputwhenitisinthe“OFF”state.

Note5:Bothhalvesofthesedualcircuitsmayconductratedcurrentsimultaneously;however,powerdissipationaveragedoverashorttimeintervalmustfallwithinthecontinuousdissipationrating.

Note6:Unlessotherwisespecifiedmin/maxlimitsapplyacross0˚Cto+70˚Crange.AlltypicalsaregivenforVCC=+5VandTA=25˚C.

Note7:Allcurrentsintodevicepinsshownaspositive,outofdevicepinsasnegative,allvoltagesreferencedtogroundunlessotherwisenoted.Allvaluesshownasmaxorminonabsolutevaluebasis.

TruthTables

DS75451

ALLHH

DS75452

ALLHH

DS75453

ALLHH

(H=highlevel,L=lowlevel)

BLHLH

Y

L(ONState)L(ONState)L(ONState)H(OFFState)

BLHLH

Y

H(OFFState)H(OFFState)H(OFFState)L(ONState)

BLHLH

Y

L(ONState)H(OFFState)H(OFFState)H(OFFState)

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DS75451/2/3SchematicDiagrams

DS75451

DS005824-11

Resistorvaluesshownarenominal.

DS75452

DS005824-12

Resistorvaluesshownarenominal.

DS75453

DS005824-13

Resistorvaluesshownarenominal.

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DS75451/2/3DCTestCircuits

DS005824-15

Bothinputsistestedsimultaneously.

FIGURE1.VIH,VOLDS005824-18

Eachinputistestedseparately.

FIGURE4.II,IIHDS005824-16

Eachinputistestedseparately.

FIGURE2.VIL,VOHDS005824-19

Eachinputistestedseparately.

FIGURE5.IOSDS005824-17

Eachinputistestedseparately.

FIGURE3.VI,IILDS005824-20

Bothgatesaretestedsimultaneously.

FIGURE6.ICCH,ICCL5www.national.com

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DS75451/2/3DCTestCircuits

(Continued)

DS005824-21

CircuitDS75451DS75452DS75453

InputUnderTestVIHVILVIHVILVIHVILOtherInputVIHVCCVIHVCCGndVILOutputApplyVOHIOLIOLVOHVOHIOLMeasureIOLVOLVOLIOHIOHVOHFIGURE7.VIH,VIL,IOH,VOLDS005824-24

DS005824-22

Bothgatesaretestedsimultaneously.

NoteA:Eachinputistestedseparately.

NoteB:WhentestingDS75453inputnotundertestisgrounded.Forallothercircuitsitisat4.5V.

FIGURE10.ICCH,ICCLforAND,NANDCircuits

FIGURE8.VI,VILDS005824-25

DS005824-23

Bothgatesaretestedsimultaneously.

Eachinputistestedseparately.

FIGURE9.II,IIHFIGURE11.ICCH,ICCLforOR,NORCircuits

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DS75451/2/3ACTestCircuitsandSwitchingTimeWaveforms

DS005824-26

DS005824-27

Note1:Thepulsegeneratorhasthefollowingcharacteristics:PRR=1MHz,ZOUT≈50Ω.Note2:CLincludesprobeandjigcapacitance.

FIGURE12.PropagationDelayTimes,EachGate

DS005824-28

DS005824-29

Note1:Thepulsegeneratorhasthefollowingcharacteristics:dutycycle≤1%,ZOUT≈50Ω.Note2:CLincludesprobeandjigcapacitance.

FIGURE13.SwitchingTimes,EachTransistor

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DS75451/2/3ACTestCircuitsandSwitchingTimeWaveforms

(Continued)

DS005824-30

DS005824-31

Note1:TheThepulsegeneratorhasthefollowingcharacteristics:PRR=1.0MHz,ZOUT≈50Ω.Note2:CLincludesprobeandjigcapacitance.

FIGURE14.SwitchingTimesofCompleteDrivers

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DS75451/2/3ACTestCircuitsandSwitchingTimeWaveforms

(Continued)

DS005824-32

DS005824-33

Note1:Thepulsegeneratorhasthefollowingcharacteristics:PRR=12.5kHz,ZOUT≈50Ω.Note2:CLincludesprobeandjigcapacitance.

FIGURE15.Latch-UPTestofCompleteDrivers

TypicalPerformanceCharacteristics

DS005824-37

FIGURE16.TransistorCollector-EmitterSaturationVoltagevsCollectorCurrent

9

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DS75451/2/3TypicalApplications

DS005824-46

*Optionalkeep-aliveresistorsmaintainoff-statelampcurrentat≈10%toreducesurgecurrent.

FIGURE17.DualLamporRelayDriver

DS005824-47

FIGURE18.ComplementaryDriver

DS005824-48

FIGURE19.TTLorDTLPositiveLogic-LevelDetector

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DS75451/2/3TypicalApplications

(Continued)

DS005824-49

*ThetwoinputresistorsmustbeadjustedforthelevelofMOSinput.

FIGURE20.MOSNegativeLogic-LevelDetector

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DS75451/2/3TypicalApplications

(Continued)

DS005824-50

FIGURE21.LogicSignalComparator

DS005824-51

*Ifinputsareunused,theyshouldbeconnectedto+5Vthrougha1kresistor.

DS005824-52

Lowoutputoccursonlywheninputsarelowsimultaneously.

FIGURE22.In-PhaseDetector

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DS75451/2/3PhysicalDimensions

inches(millimeters)unlessotherwisenoted

SOPackage(M)

OrderNumberDS75451M,DS75452M,DS75453M

NSPackageNumberM08A

MoldedDual-In-LinePackage(N)

OrderNumberDS75451N,DS75452N,DS75453N

NSPackageNumberN08E

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DS75451/2/3SeriesDualPeripheralDriversNotes

LIFESUPPORTPOLICY

NATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFTHEPRESIDENTANDGENERALCOUNSELOFNATIONALSEMICONDUCTORCORPORATION.Asusedherein:1.Lifesupportdevicesorsystemsaredevicesorsystemswhich,(a)areintendedforsurgicalimplantintothebody,or(b)supportorsustainlife,andwhosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjurytotheuser.

NationalSemiconductorCorporationAmericas

Tel:1-800-272-9959Fax:1-800-737-7018Email:support@nsc.com

www.national.com

NationalSemiconductorEurope

Fax:+49(0)180-5308586Email:europe.support@nsc.com

DeutschTel:+49(0)6995086208EnglishTel:+44(0)8702402171FrançaisTel:+33(0)141918790

2.Acriticalcomponentisanycomponentofalifesupportdeviceorsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceorsystem,ortoaffectitssafetyoreffectiveness.

NationalSemiconductorAsiaPacificCustomerResponseGroupTel:65-2544466Fax:65-2504466

Email:ap.support@nsc.com

NationalSemiconductorJapanLtd.

Tel:81-3-5639-7560Fax:81-3-5639-7507

Nationaldoesnotassumeanyresponsibilityforuseofanycircuitrydescribed,nocircuitpatentlicensesareimpliedandNationalreservestherightatanytimewithoutnoticetochangesaidcircuitryandspecifications.

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