专利名称：ESD PROTECTION CIRCUIT
发明人：Da-Wei LAI,Mahadeva Iyer NATARAJAN申请号：US13485932申请日：20120601
公开号：US20130321963A1公开日：20131205
专利附图：
摘要：An ESD circuit is disclosed. The ESD circuit includes a pad and a ground and asensing element coupled between the pad and ground for sensing an ESD current. Thesensing element generates an active sense output signal when an ESD current is sensedand an inactive sense output signal when no ESD current is sensed. The ESD circuit also
includes a bypass element comprising a bi-polar junction transistor. The bypass elementis coupled in parallel to the sensing element between the pad and ground. The activesense output signal causes the bypass element to be activated to provide a current pathbetween the pad and ground.
申请人：Da-Wei LAI,Mahadeva Iyer NATARAJAN
地址：Singapore SG,Clifton Park NY US
国籍：SG,US
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