专利名称：Method and apparatus for measuring the
lifetime on P-N semiconductor junctions byphotovoltaic effect
发明人：Russo, Vincenzo申请号：EP89200716.2申请日：19890321公开号：EP0335444A1公开日：19891004
专利附图：
摘要：The method and the apparatus consist of subjecting one side of the junction tomonochromatic radiation of a pre-established intensity. By measuring the voltage Vp
generated by photovoltaic effect at the ends of the junction it is possible to calculate thelifetime τ thanks to a correlation between τ and Vp which can be expressed by means of afunction τ(Vp) that takes into account the data relating to the measuring conditions andthe structural parameters of the junction.
申请人：SGS-THOMSON MICROELECTRONICS S.r.l.
地址：Via C. Olivetti, 2 I-20041 Agrate Brianza (Milano) IT
国籍：IT
代理机构：Arena, Giovanni
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