Dual damascene interconnect in hybrid dielectric

专利名称：Dual damascene interconnect in hybrid

dielectric

发明人：Yi-Nien Su,Jyu-Horng Shieh,Hun-Jan Tao申请号：US11172442申请日：20050630

公开号：US20070001306A1公开日：20070104

专利附图：

摘要：A semiconductor device. A diffusion barrier layer overlies a substrate. Anadhesion promoting layer overlies the diffusion barrier layer. A first dielectric layerbetween the diffusion barrier layer and the adhesion promoting layer comprises at least

one via opening through the diffusion barrier layer and the adhesion promoting layer. Asecond dielectric layer overlies the adhesion promoting layer, comprising a trenchopening above the via opening. A metal interconnect fills the via and trench openings.

申请人：Yi-Nien Su,Jyu-Horng Shieh,Hun-Jan Tao

地址：Kaohsiung City TW,Hsin-Chu City TW,HsinChu City TW

国籍：TW,TW,TW

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