专利名称：Simplified dual damascene process发明人：Been Jon Woo申请号：US10968103申请日：20041020公开号：US07015149B2公开日：20060321
专利附图：
摘要：A simplified dual damascene process is disclosed. In the dual damasceneprocess, a semiconductor substrate with MOS devices having a first metal layer, an etchstopping layer, and a dielectric layer in sequence are formed thereon. A via is formed onthe dielectric layer by lithography. An organic layer is then formed. A trench is formed on
the dielectric layer by the organic layer, thereby forming a dual damascene structurecomprised of the trench and the via. The present invention is directed to a simplified dualdamascene process, which can obtain a better trench profile without increasing thedielectric constant of the inter-metal dielectric (IMD).
申请人：Been Jon Woo
地址：Shanghai CN
国籍：CN
代理机构：Rosenberg, Klein & Lee
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