High velocity method for depositing diamond films

专利名称：High velocity method for depositing

diamond films from a gaseous phase in SHFdischarge plasma and a plasma reactor forcarrying out said method

发明人：Anatoly Leontievich Vikharev,Aleksey

Mikhaylovich Gorbachev,AleksandrGrigorievich Litvak,Juriy VladmirovichBykov,Grigory Gennadievich Denisov,OlegAndreevich Ivanov,Vladimir AleksandrovichKoldanov

申请号：US12660445申请日：20100226

公开号：US20100218722A1公开日：20100902

专利附图：

摘要：The invention relates to carbon deposition by decomposing gaseous

compounds with the aid of the SHF discharge plasma and can be used, for example, forproducing polycrystalline diamond films (plates), which are used for producing outputwindows of power SHF sources, for example gyrotrons. Said invention ensures a highspeed deposition of the high quality diamond films (having a loss-tangent angle □ equalto or less than 3×10on supports whose diameter is equal to or higher than 100 mm. Forthis purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reactionchamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture isactivated by producing a stable nonequilibrium plasma with the aid of SHF radiationhaving a frequency f which is many times higher than a commonly used frequency of 2.45GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed nearthe carrier and plasma layers are formed in the antinodes thereof in such a way that thesizes thereof are adjustable.

申请人：Anatoly Leontievich Vikharev,Aleksey Mikhaylovich Gorbachev,AleksandrGrigorievich Litvak,Juriy Vladmirovich Bykov,Grigory Gennadievich Denisov,Oleg

Andreevich Ivanov,Vladimir Aleksandrovich Koldanov

地址：Nizhny Novgorod RU,Nizhny Novgorod RU,Nizhny Novgorod RU,NizhnyNovgorod RU,Nizhny Novgorod RU,Nizhny Novgorod RU,Nizhny Novgorod RU

国籍：RU,RU,RU,RU,RU,RU,RU

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