专利名称：Image sensor and method for forming the
same
发明人：Young-Hoon Park申请号：US11289192申请日：20051128公开号：US07602034B2公开日：20091013
专利附图：
摘要：In an image sensor and a method for forming the same, the method comprises:preparing a substrate having a pixel array region and a peripheral circuit region;sequentially stacking a gate electrode layer and a mask layer on the substrate;
patterning the gate electrode layer and the mask layer to form a gate pattern;implanting impurities in the substrate in the pixel array region to form a photoelectricconversion region; and removing the mask layer.
申请人：Young-Hoon Park
地址：Suwon-si KR
国籍：KR
代理机构：Mills & Onello, LLP
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