BD249C-S资料

Designed for Complementary Use with the BD250 Series

125 W at 25°C Case Temperature25 A Continuous Collector Current40 A Peak Collector Current

Customer-Specified Selections Available

CEB

SOT-93 PACKAGE

(TOP VIEW)

1

2

3

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

BD249Collector-emitter voltage (RBE = 100 Ω)

BD249ABD249BBD249CBD249Collector-emitter voltage (IC = 30 mA)Emitter-base voltageContinuous collector currentPeak collector current (see Note 1)Continuous base currentContinuous device dissipation at (or below) 25°C case temperature (see Note 2)Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Unclamped inductive load energy (see Note 4)Operating junction temperature rangeStorage temperature rangeLead temperature 3.2 mm from case for 10 secondsNOTES:1.

2.3.4.

BD249ABD249BBD249C

VEBOICICMIBPtotPtot½LICTjTstgTL

2SYMBOLVALUE557090115456080100525405125390-65 to +150-65 to +150250UNIT

VCER

V

VCEO

V

VAAAWWmJ°C°C°CThis value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

Derate linearly to 150°C case temperature at the rate of 1 W/°C.

Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.

PRODUCTINFORMATION1

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249, BD249A, BD249B, BD249CNPN SILICON POWER TRANSISTORSelectrical characteristics at 25°C case temperature

PARAMETERCollector-emitterbreakdown voltage

TEST CONDITIONS

BD249V(BR)CEO

IC = 30 mA(see Note 5)VCE=55VICES

Collector-emittercut-off currentCollector cut-offcurrentEmitter cut-offcurrentForward currenttransfer ratioCollector-emittersaturation voltageBase-emittervoltage

Small signal forward current transfer ratioSmall signal forward current transfer ratio

VCE=70VVCE=90VVCE=115 V

ICEOIEBOhFEVCE(sat)VBEhfe

VCE=30VVCE=60VVEB = 5 VVCE = 4 VVCE = 4 VVCE = 4 VIB = 1.5 AIB = 5 AVCE = 4 VVCE = 4 VVCE = 10 VVCE = 10 V

VBE=0VBE=0VBE=0VBE=0IB=0IB=0IC=0IC=1.5AIC=15AIC=25AIC=15AIC=25AIC=15AIC= 25 A

IC= 1A

IC= 1A

(see Notes 5 and 6)(see Notes 5 and 6)f = 1 kHzf = 1 MHz

253

(see Notes 5 and 6)

25105

1.8424

VV

IB = 0

BD249ABD249BBD249CBD249BD249ABD249BBD249CBD249/249ABD249B/249C

MIN456080100

0.70.70.70.7111

mAmAmAV

TYP

MAX

UNIT

|hfe|

NOTES:5.These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6.These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.thermal characteristics

RθJCRθJA

PARAMETER

MINTYPMAX142UNIT°C/W°C/WJunction to case thermal resistanceJunction to free air thermal resistanceresistive-load-switching characteristics at 25°C case temperature

PARAMETERtontoff

Turn-on timeTurn-off time

IC = 5 AVBE(off) = -5 V

TEST CONDITIONS †IB(on) = 0.5 ARL = 5 Ω

IB(off) = -0.5 Atp = 20 µs, dc ≤ 2%

MIN

TYP0.30.9

MAX

UNITµsµs

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT2

INFORMATIONJUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249, BD249A, BD249B, BD249CNPN SILICON POWER TRANSISTORSTYPICAL CHARACTERISTICSTYPICAL DC CURRENT GAINvsCOLLECTOR CURRENT1000VCE = 4 VTC = 25°C tp = 300 µs, duty cycle < 2%TCS635ADCOLLECTOR-EMITTER SATURATION VOLTAGEvsBASE CURRENTVCE(sat) - Collector-Emitter Saturation Voltage - V10TCS635ABhFE - DC Current Gain1001·0100·1IC = 25 AIC = 20 AIC = 15 AIC = 10 A0·11·010100IB - Base Current - A10·11·00·0110 100 0·001IC = 300 mAIC = 1 AIC = 3 A0·01IC - Collector Current - AFigure 1. Figure 2. BASE-EMITTER VOLTAGEvsCOLLECTOR CURRENT2·01·8VBE - Base-Emitter Voltage - V1·61·41·21·00·80·60·1VCE = 4 VTC = 25°CTCS635AC1·010100IC - Collector Current - AFigure 3. PRODUCTINFORMATION3

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249, BD249A, BD249B, BD249CNPN SILICON POWER TRANSISTORSMAXIMUM SAFE OPERATING REGIONSMAXIMUM FORWARD-BIASSAFE OPERATING AREA100SAS635ABIC - Collector Current - A10tp = 300 µs, d = 0.1 = 10%tp = 1 ms, d = 0.1 = 10%tp = 10 ms, d = 0.1 = 10%DC Operation1·00·1BD249BD249ABD249BBD249C1010010000·011·0VCE - Collector-Emitter Voltage - VFigure 4. THERMAL INFORMATIONMAXIMUM POWER DISSIPATIONvsCASE TEMPERATURE140Ptot - Maximum Power Dissipation - W1201008060402000255075100125150TC - Case Temperature - °CTIS635AAFigure 5. PRODUCT4

INFORMATIONJUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.