专利名称：Vertical power mosfet having high withstand
voltage and high switching speed
发明人：Takahashi, Mitsuasa申请号：EP89303260.7申请日：19890403公开号：EP0335750A2公开日：19891004
专利附图：
摘要：In a vertical field effect transistor including a source electrode and a gate onthe front surface of a semiconductor substrate having one conductivity type and a drainelectrode on the back surface of the substrate, the semiconductor device of the present
invention has the structure wherein a connection region of one conductivity typepositioned between two channel forming base regions of the opposite conductivity typeis formed by a semiconductor layer having a higher impurity concentration than the drainregion of the one conductivity type, and the surface portion of the connection regionwhich is connected to the channel has a lower impurity concentration than the connectionregion.
申请人：NEC CORPORATION
地址：7-1, Shiba 5-chome Minato-ku Tokyo JP
国籍：JP
代理机构：Moir, Michael Christopher
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