专利名称：Semiconductor device and a method for
forming a semiconductor device
发明人：Daniel Tutuc,Franz Hirler,Andreas
Voerckel,Hans Weber
申请号：US15041671申请日：20160211公开号：US09704954B2公开日：20170711
专利附图：
摘要：A semiconductor device comprises at least one strip-shaped cell compensationregion of a vertical electrical element arrangement, at least one strip-shaped edge
compensation region and a bridge structure. The at least one strip-shaped cellcompensation regions extends into a semiconductor substrate and comprises a firstconductivity type. Further, the at least one strip-shaped cell compensation region isconnected to a first electrode structure of the vertical electrical element arrangement.The at least one strip-shaped edge compensation region extends into the semiconductorsubstrate within an edge termination region of the semiconductor device and outside thecell region. Further, the at least one strip-shaped edge compensation region comprisesthe first conductivity type. The bridge structure electrically connects the at least onestrip-shaped edge compensation region with the at least one strip-shaped cellcompensation region within the edge termination region.
申请人：Infineon Technologies Austria AG
地址：Villach AT
国籍：AT
代理机构：Baker Botts L.L.P.
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容