专利名称：Semiconductor devices and methods for
forming a semiconductor device
发明人：Gerhard Schmidt,Erwin Lercher申请号：US15434208申请日：20170216公开号：US10079281B2公开日：20180918
专利附图：
摘要：A method for forming a semiconductor device includes incorporating dopantsof a first conductivity type into a nearby body region portion of a semiconductorsubstrate having a base doping of the first conductivity type. The incorporation of the
dopants of the first conductivity type is masked by a mask structure at at least part of anedge region of the semiconductor substrate. The method further includes forming abody region of a transistor structure of a second conductivity type in the semiconductorsubstrate. The nearby body region portion of the semiconductor substrate is locatedadjacent to the body region of the transistor structure.
申请人：Infineon Technologies AG
地址：Neubiberg DE
国籍：DE
代理机构：Murphy, Bilak & Homiller, PLLC
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