Cathode sputtering method for the manufacture of e

专利名称：Cathode sputtering method for the

manufacture of etched structures

发明人：Ursula Convertini,Heinz Dimigen,Holger

Luthje

申请号：US05/693491申请日：19760607公开号：US04049521A公开日：19770920

摘要：In usual practice, cathodically etched structures typically show either non-etched parts (strong readsorption of sputtered material) or the etched structure showsstrong grooves at the edges of the etching mask (strong back-diffusion of sputteredmaterial). With a variation of the working gas pressure an adjustability of the average freepath length of the atoms of the sputtered material and hence the adjustability of thequantity of material redeposited on the basis of back-diffusion is obtained. The workinggas pressure can hence be adjusted so that the etching time to remove the readsorbedmaterial and the material deposited again by back-diffusion is locally constant and equaletching rates are obtained for all areas of the structure to be etched.

申请人：U.S. PHILIPS CORPORATION

代理人：Frank R. Trifari,Norman N. Spain

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