3SK319
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
REJ03G0820-0200 (Previous ADE-208-602)
Rev.2.00 Aug.10.2005
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PLSP0004ZA-A(Package name: MPAK-4) 23141. Source2. Gate13. Gate24. Drain Note: Marking is “YB–”.
Rev.2.00 Aug 10, 2005 page 1 of 7
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3SK319
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S ±6 V Gate2 to source voltage VG2S ±6 V Drain current ID 20 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS±6 — — V IG1 = ±10 µA, VG2S = VDS = 0
±6 — — V IG2 = ±10 µA, VG1S = VDS = 0 V(BR)G2SSGate2 to source breakdown
voltage
Gate1 to source cutoff current IG1SS — — ±100 nA VG1S = ±5 V, VG2S = VDS = 0 Gate2 to source cutoff current IG2SS — — ±100 nA VG2S = ±5 V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.5 0.7 1.0 V VDS = 5 V, VG2S = 3 V, ID = 100 µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5 V, VG1S = 3 V, ID = 100 µA Drain current IDS(op) 0.5 4 10 mA VDS = 3.5 V, VG1S = 1.1 V,
VG2S = 3 V
Forward transfer admittance |yfs| 18 24 32 mS VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f = 1 kHz
Input capacitance Ciss 1.3 1.6 1.9 pF VDS = 3.5V, VG2S = 3V
ID = 10mA , f = 1MHz Output capacitance Coss 0.9 1.2 1.5 pF Reverse transfer capacitance Crss — 0.019 0.03 pF Power gain PG 18 21 — dB VDS = 3.5 V, VG2S = 3 V Noise figure NF — 1.4 2.2 dB ID = 10 mA , f = 900 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
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3SK319
Maximum Channel PowerDissipation CurveChannel Power Dissipation Pch (mW)2002016150Typical Output CharacteristicsVG1S = 1.7 V1.6 V1.5 VVG2S = 3 VDrain Current ID (mA)121.4 V100841.3 V1.2 V1.1 V1.0 V0.9 V0.8 V500501001502000246810Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V)Drain Current vs.Gate2 to Source Voltage20VDS = 3.5 V2.0 V1.8 V1.6 VDrain Current vs.Gate1 to Source Voltage20VDS = 3.5 V2.5 V161284VG2S = 1.0 V012 3451.5 V2.0 VDrain Current ID (mA)Drain Current ID (mA)1612841.4 V1.2 VVG1S = 1.0 V012345Gate1 to Source Voltage VG1S (V)Forward Transfer Admittancevs. Gate1 VoltageForward Transfer Admittance |yfs| (mS)30VDS = 3.5 V24182.5 VVG2S = 3 VGate2 to Source Voltage VG2S (V)Power Gain vs. Drain Current2520Power Gain PG (dB)15105VDS = 3.5 VVG2S = 3 Vf = 900 MHz5101520251261 V2 V1.5 V00.40.81.21.62.00Gate1 to Source Voltage VG1S (V)Drain Current ID (mA)
Rev.2.00 Aug 10, 2005 page 3 of 7
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3SK319
Noise Figure vs. Drain Current54321VDS = 3.5 VVG2S = 3 Vf = 900 MHzPower Gain vs. Drain to Source Voltage252015105VG2S = 3 VID = 10 mAf = 900 MHz246810Noise Figure NF (dB)Power Gain PG (dB)25051015200Drain Current ID (mA)Drain to Source Voltage VDS (V)Noise Figure vs. Drain to Source Voltage 54321VG2S = 3 VID = 10 mAf = 900 MHzPower Gain vs. Gate2 to Source Voltage2520VDS = 3.5 Vf = 900MHzNoise Figure NF (dB)Power Gain PG (dB)151050246810012345Drain to Source Voltage VDS (V)Gate2 to Source Voltage VG2S (V)Noise Figure vs. Gate2 to Source Voltage54321VDS = 3.5 Vf = 900MHzNoise Figure NF (dB)012345Gate2 to Source Voltage VG2S (V)
Rev.2.00 Aug 10, 2005 page 4 of 7
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3SK319
S11 Parameter vs. Frequency.8.6.411.52345100.2.4.6.811.5234510–10–.2–5–4–3–.4–.6–.8–1.5–2–120° –90° –60° –1180° 0° 150° 30° S21 Parameter vs. Frequency90° 120° Scale: 1 / div.60° .2–150° –30° Test Condition :VDS = 3.5 V , VG2S = 3 VID = 10mA50 to 1000 MHz (50 MHz step)Test Condition :VDS = 3.5 V , VG2S = 3 VID = 10mA 50 to 1000 MHz (50 MHz step)S12 Parameter vs. Frequency90° 120° S22 Parameter vs. Frequency.8.6.411.5234510Scale: 0.002 / div.60°150° 30° .2180° 0° 0.2.4.6.811.5234510–10–.2–150° –30° –.4–120° –90° –60° –.6–.8–1.5–2–1–5–4–3Test Condition :VDS = 3.5 V , VG2S = 3 VID = 10mA 50 to 1000 MHz (50 MHz step)Test Condition :VDS = 3.5 V , VG2S = 3 VID = 10mA50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
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3SK319
S Parameter
(VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω)
Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 50 1.000 –2.8 2.41 176.3 0.00068 89.1 0.999 –2.2 100 0.998 –5.8 2.41 171.9 0.00176 88.5 0.996 –4.5 150 0.997 –9.1 2.39 167.6 0.00223 80.7 0.996 –6.7 200 0.994 –12.2 2.38 163.7 0.00303 76.6 0.994 –8.7 250 0.994 –15.1 2.37 159.8 0.00365 79.1 0.991 –11.0 300 0.986 –18.5 2.35 155.5 0.00414 75.4 0.988 –13.2 350 0.978 –21.3 2.30 151.4 0.00484 75.0 0.983 –15.3 400 0.972 –24.1 2.28 147.6 0.00533 78.0 0.980 –17.4 450 0.969 –27.0 2.26 143.6 0.00588 71.6 0.976 –19.6 500 0.954 –29.7 2.23 140.0 0.00617 69.5 0.971 –21.7 550 0.955 –32.8 2.19 135.9 0.00666 71.5 0.966 –23.7 600 0.941 –35.7 2.17 132.2 0.00672 70.6 0.960 –25.6 650 0.932 –38.3 2.14 128.6 0.00694 69.0 0.955 –27.8 700 0.924 –41.3 2.09 125.0 0.00709 71.4 0.948 –29.9 750 0.919 –44.1 2.07 121.5 0.00689 69.0 0.942 –31.8 800 0.905 –46.9 2.03 117.9 0.00699 68.9 0.937 –33.8 850 0.896 –49.2 2.00 114.7 0.00644 74.2 900 0.884 –52.4 1.96 110.4 0.00633 75.5 950 0.880 –54.7 1.93 107.1 0.00585 77.8 1000 0.866 –57.7 1.89 103.8 0.00605 82.1
0.930 –35.8 0.923 –37.6 0.917 –39.8 0.910 –41.9
Rev.2.00 Aug 10, 2005 page 6 of 7
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3SK319
Package Dimensions
JEITA Package CodeSC-61AARENESAS CodePLSP0004ZA-APackage NameMPAK-4 / MPAK-4VMASS[Typ.]0.013gDe2b1BBeAQcEHEReference SymbolDimension in MillimetersLAAxMSAbL1A3e2LPeA2AI1b5ySA1Se1bb2cc1cb1b3c1I1b4A-A SectionB-B SectionPattern of terminal position areasAA1A2A3bb1b2b3cc1DEee2HELL1LPxyb4b5e1I1QMin1.001.00.350.55Nom0.12.71.351.10.250.420.620.40.60.130.111.50.950.852.8Max1.30.11.20.50.70.153.11.652.20.350.150.253.00.750.550.650.050.050.550.751.051.950.3
Ordering Information
Part Name Quantity
3SK319YB-TL-E 3000 Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 7 of 7
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